发明名称 |
METHOD FOR Nitride FILM producing |
摘要 |
A method for nitride film producing includes titanium target sputtering. Then the modified coating is formed. At that as a polycrystalline substrate the substrate of structural steel VSt3sp is used. Before the implantation a negative potential is submitted and the system is energized. Simultaneously the voltage is supplied to the target. At that the dispersed titanium ions beaten from the target penetrate into the steel substrate. |
申请公布号 |
UA56823(U) |
申请公布日期 |
2011.01.25 |
申请号 |
UA20100009062U |
申请日期 |
2010.07.19 |
申请人 |
VOLODYMYR DAL EASTERN UKRAINIAN NATIONAL UNIVERSITY |
发明人 |
DZIUBA VIACHESLAV LEONIDOVYCH;KLIAKHINA NATALIIA PANASIVNA;VASETSKA LARYSA OLEKSANDRIVNA |
分类号 |
C23C16/34 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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