发明名称 |
Integrated semiconductor optical device |
摘要 |
A semiconductor laser (a first semiconductor optical device) and an optical modulator (a second semiconductor optical device) are integrated on the same n-type InP substrate. The semiconductor laser butt-joined to the optical modulator. Each of the semiconductor laser and the optical modulator has a Be-doped p-type InGaAs contact layer. The p-type InGaAs contact layers have a Be-doping concentration of 7×1018 cm−3 or more, and a thickness of 300 nm or less.
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申请公布号 |
US7876799(B2) |
申请公布日期 |
2011.01.25 |
申请号 |
US20080099205 |
申请日期 |
2008.04.08 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
YAMATOYA TAKESHI;WATATANI CHIKARA |
分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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