发明名称 Reading threshold switching memory cells
摘要 Using the voltage across a threshold switching cell to sense the state of the cell, rather than sensing current through the cell, may result in a faster read. In some embodiments, current consumption during reading of conductive states may be reduced by using a capacitor coupled across the cell.
申请公布号 US7876607(B2) 申请公布日期 2011.01.25
申请号 US20080333530 申请日期 2008.12.12
申请人 TANG STEPHEN 发明人 TANG STEPHEN
分类号 G11C11/00;G11C7/02 主分类号 G11C11/00
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