发明名称 |
Polymer inactivation method for polycrystalline silicon manufacturing device |
摘要 |
A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein humidified gas such as water vapor and humidified nitrogen gas is supplied into a reacting furnace for manufacturing polycrystalline silicon to hydrolyze polymers adhered to an inner surface of the reacting furnace. It is preferable that a furnace wall of the reacting furnace is heated when the humidified gas is supplied.
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申请公布号 |
US7875349(B2) |
申请公布日期 |
2011.01.25 |
申请号 |
US20090382899 |
申请日期 |
2009.03.26 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
ENDOH TOSHIHIDE;TEBAKARI MASAYUKI;ISHII TOSHIYUKI;SAKAGUCHI MASAAKI |
分类号 |
B32B15/04 |
主分类号 |
B32B15/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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