发明名称 Polymer inactivation method for polycrystalline silicon manufacturing device
摘要 A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein humidified gas such as water vapor and humidified nitrogen gas is supplied into a reacting furnace for manufacturing polycrystalline silicon to hydrolyze polymers adhered to an inner surface of the reacting furnace. It is preferable that a furnace wall of the reacting furnace is heated when the humidified gas is supplied.
申请公布号 US7875349(B2) 申请公布日期 2011.01.25
申请号 US20090382899 申请日期 2009.03.26
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 ENDOH TOSHIHIDE;TEBAKARI MASAYUKI;ISHII TOSHIYUKI;SAKAGUCHI MASAAKI
分类号 B32B15/04 主分类号 B32B15/04
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