| 摘要 |
A helical pixilated photoresist includes a photoacid generator, a photoimageable polymer comprising a self-assembly moiety and a solubility switch, the photoimageable polymer having a helical structure. In one embodiment the helical pixilated photoresist is formed of a photoimageable polymer comprising a pyridine-based quencher copolymer and a solubility switch copolymer, wherein the photoimageable polymer has a helical structure formed by pi-stacking of the pyridine-based quencher copolymer. The helical pixilated photoresist is applied to a substrate and irradiated and developed to form a patterned photoresist.
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