| 摘要 |
PROBLEM TO BE SOLVED: To prevent sensitivity from being affected by the machining variations of the thickness of a beam section and a movable electrode in a capacitance type semiconductor acceleration sensor in which the movable electrode, a fixed electrode, and the beam section are formed by forming a trench on a second silicon substrate supported on the first silicon substrate. SOLUTION: The semiconductor acceleration sensor 100 has a semiconductor substrate 10 having the second silicon substrate 12 as a semiconductor layer supported on the first silicon substrate 11. A weight section 21 and a movable electrode 24 that can be displaced in a displacement direction X by forming a trench 14 on the second silicon substrate 12, the fixed electrodes 31, 41 arranged opposite to the movable electrode 24, and a beam section 22 for displacing the weight section 21 are formed. In the semiconductor acceleration sensor 100 wherein applied acceleration is detected from a change in the capacitance between the movable electrode 24 and the fixed electrodes 31, 41 when acceleration is applied, the thickness of the beam section 22 is larger than that of the movable electrode 24. COPYRIGHT: (C)2006,JPO&NCIPI |
