| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device whereby the generation of particles is so prevented surely as to be able to improve the manufacturing yield of the semiconductor device, when manufacturing the semiconductor device having trenches (grooves) of an insulation film being buried therein. SOLUTION: The manufacturing method of the semiconductor device has a process for so etching a semiconductor substrate 10 by using as a mask a protective film 1 formed on the semiconductor substrate 10, and having a plurality of openings as to form a plurality of trenches 7 in the semiconductor substrate 10; an insulation-film forming process for forming next an insulation film 2 of filling it into the plurality of trenches 7, and covering the protective film 1 with it; an insulation-film processing process for reducing selectively the film thickness of the insulation film 2 present in a peripheral edge 6 of the semiconductor substrate 10; a process for so removing the insulation film 2 present on the protective film 1; by a CMP polishing as to expose the protective film 1; and a process for removing thereafter the protective film 1. COPYRIGHT: (C)2006,JPO&NCIPI
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