| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element capable of an efficient and high output while maintaining element characteristics. SOLUTION: A diffusion preventing layer 4 which is composed of a compound semiconductor containing C (carbon) is arranged in a position separate at a prescribed interval from a guide layer 6. The diffusion preventing layer 4 containing carbon reduces diffusion from a cap layer 1 of a dopant of a high concentrated group II to an activity layer 7. Further, an electronic overflow is reduced via the narrow diffusion preventing layer 4 of a band gap, since the diffusion preventing layer 4 is formed in a position operate at a prescribed interval apart from the activity layer 7. In addition, it is made possible to reduce the crystalline deterioration of the activity layer 7 caused by the diffusion of H and O. As a result, the efficient and high output of the semiconductor laser element can be obtained by reducing contact resistance so that a high concentrated group II dopant is doped in the cap layer 1, while maintaining the element characteristics. COPYRIGHT: (C)2006,JPO&NCIPI
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