发明名称 |
Semiconductor structure having selective silicide-induced stress and a method of producing same |
摘要 |
The channel of a MOSFET is selectively stressed by selectively stressing the silicide layers on the gate electrode and the source/drain. Stress in the silicide layer is selectively produced by orienting the larger dimensions of the silicide grains in a first direction and the smaller dimensions in a second, perpendicular direction, with one of the directions being parallel to the direction of carrier movement in the channel and the other direction being perpendicular thereto.
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申请公布号 |
US7875959(B2) |
申请公布日期 |
2011.01.25 |
申请号 |
US20050216512 |
申请日期 |
2005.08.31 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
KE CHUNG-HU;LEE WEN-CHIN;HU CHENMING |
分类号 |
H01L29/04 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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