发明名称 |
Photodetector and production method thereof |
摘要 |
The invention offers a photodetector that has an N-containing InGaAs-based absorption layer having a sensitivity in the near-infrared region and that suppresses the dark current and a production method thereof. The photodetector is provided with an InP substrate 1, an N-containing InGaAs-based absorption layer 3 positioned above the InP substrate 1, a window layer 5 positioned above the N-containing InGaAs-based absorption layer 3, and an InGaAs buffer layer 4 positioned between the N-containing InGaAs-based absorption layer 3 and the window layer 5.
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申请公布号 |
US7875906(B2) |
申请公布日期 |
2011.01.25 |
申请号 |
US20080163039 |
申请日期 |
2008.06.27 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
NAGAI YOUICHI;IGUCHI YASUHIRO;MIURA KOUHEI |
分类号 |
H01L31/107 |
主分类号 |
H01L31/107 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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