发明名称 |
Nonvolatile memory device and related methods of operation |
摘要 |
In a nonvolatile memory device, a program operation is performed on a plurality of nonvolatile memory cells by programming data having a first logic state in a first group among a plurality of selected memory cells selected from the plurality of nonvolatile memory cells during a first program interval of the program operation, and thereafter, programming data having a second logic state different from the first logic state in a second group among the selected memory cells during a second program interval of the program operation after the first program interval.
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申请公布号 |
US7876609(B2) |
申请公布日期 |
2011.01.25 |
申请号 |
US20100720918 |
申请日期 |
2010.03.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE KWANG-JIN;KWAK CHOONG-KEUN;KIM DU-EUNG |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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