| 摘要 |
A semiconductor device includes a semiconductor substrate including an active element or an integrated circuit and a plurality of connection electrodes to be electrically connected to the integrated circuit; a first resin layer formed on a surface of the semiconductor substrate on which the connection electrodes are formed in such a manner avoiding the connection electrodes; a connection wiring layer formed between the semiconductor substrate and the first resin layer and connected to one of the plurality of connection electrodes; a Cu wiring layer connected at one end thereof to the connection wiring layer and formed on the surface of the first resin layer; a passive element composed of the connection wiring layer and the Cu wiring layer; a second resin layer for covering a surface of the Cu wiring layer; and an external terminal electrically connected to some of the plurality of connection electrodes and formed such that a portion of the second resin layer protrudes from the second resin layer.
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