发明名称 |
Semiconductor memory device having a sense amplifier circuit with decreased offset |
摘要 |
A semiconductor memory device having high integration, low power consumption and high operation speed. The memory device includes a sense amplifier circuit having plural pull-down circuits and a pull-up circuit. A transistor constituting one of the plural pull-down circuits has a larger constant than that of a transistor constituting the other pull-down circuits, for example, a channel length and a channel width. The pull-down circuit having the larger constant transistor is activated earlier than the other pull-down circuits and the pull-up circuit, which are activated to conduct reading. The data line and the earlier driven pull-down circuit are connected by an NMOS transistor and the NMOS transistor is activated or inactivated to control the activation or inactivation of the pull-down circuit.
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申请公布号 |
US7876627(B2) |
申请公布日期 |
2011.01.25 |
申请号 |
US20080969223 |
申请日期 |
2008.01.03 |
申请人 |
HITACHI, LTD.;ELPIDA MEMORY, INC. |
发明人 |
AKIYAMA SATORU;SEKIGUCHI TOMONORI;TAKEMURA RIICHIRO;NAKAYA HIROAKI;MIYATAKE SHINICHI;WATANABE YUKO |
分类号 |
G11C7/06 |
主分类号 |
G11C7/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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