发明名称 |
Electric device using solid electrolyte |
摘要 |
The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.
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申请公布号 |
US7875883(B2) |
申请公布日期 |
2011.01.25 |
申请号 |
US20040490598 |
申请日期 |
2004.08.20 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY;RIKEN;NEC CORPORATION |
发明人 |
SAKAMOTO TOSHITSUGU;AONO MASAKAZU;HASEGAWA TSUYOSHI;NAKAYAMA TOMONOBU;TERABE KAZUYA;KAWAURA HISAO;SUGIBAYASHI TADAHIKO |
分类号 |
H01L29/06;G11C13/02;H01L27/24;H01L45/00 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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