发明名称 Electric device using solid electrolyte
摘要 The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.
申请公布号 US7875883(B2) 申请公布日期 2011.01.25
申请号 US20040490598 申请日期 2004.08.20
申请人 JAPAN SCIENCE AND TECHNOLOGY AGENCY;RIKEN;NEC CORPORATION 发明人 SAKAMOTO TOSHITSUGU;AONO MASAKAZU;HASEGAWA TSUYOSHI;NAKAYAMA TOMONOBU;TERABE KAZUYA;KAWAURA HISAO;SUGIBAYASHI TADAHIKO
分类号 H01L29/06;G11C13/02;H01L27/24;H01L45/00 主分类号 H01L29/06
代理机构 代理人
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