发明名称 |
CMOS structure including differential channel stressing layer compositions |
摘要 |
A CMOS structure includes an n-FET device comprising an n-FET channel region and a p-FET device comprising a p-FET channel region. The n-FET channel region includes a first silicon material layer located upon a silicon-germanium alloy material layer. The p-FET channel includes a second silicon material layer located upon a silicon-germanium-carbon alloy material layer. The silicon-germanium alloy material layer induces a desirable tensile strain within the n-FET channel. The silicon-germanium-carbon alloy material layer suppresses an undesirable tensile strain within the p-FET channel region. A silicon-germanium-carbon alloy material from which is comprised the silicon-germanium-carbon alloy material layer may be formed by selectively incorporating carbon into a silicon-germanium alloy material from which is formed the silicon-germanium alloy material layer.
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申请公布号 |
US7875511(B2) |
申请公布日期 |
2011.01.25 |
申请号 |
US20070685458 |
申请日期 |
2007.03.13 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YAOCHENG LIU;DONATON RICARDO A.;RIM KERN |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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