发明名称 Radical generating method, etching method and apparatus for use in these methods
摘要 The method for generating radicals comprises: feeding F2 gas or a mixed gas of F2 gas and an inert gas into a chamber of which the inside is provided with a carbon material, supplying a carbon atom from the carbon material by applying a target bias voltage to the carbon material, and thereby generating high density radicals, wherein the ratio of CF3 radical, CF2 radical and CF radical is arbitrarily regulated by controlling the target bias voltage applied to the carbon material while measuring the infrared absorption spectrum of radicals generated inside the chamber.
申请公布号 US7875199(B2) 申请公布日期 2011.01.25
申请号 US20040578835 申请日期 2004.11.09
申请人 SHOWA DENKO K.K. 发明人 GOTO TOSHIO;HORI MASARU;NAGAI MIKIO
分类号 C23C14/34;C23F1/00;H01L21/311 主分类号 C23C14/34
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