| 摘要 |
In a data storage device (10) having parallel memory planes each memory plane includes a first resistive cross point plane of memory cells (108a), a second resistive cross point plane of memory cells (108b), a plurality of conductive word lines (102) shared between the first and second planes of memory cells, a plurality of bit lines (104), each bit line coupling one or more cells from the first plane to another memory cell in the second plane, and a plurality of unidirectional elements (110). A first unidirectional element couples a first memory cell from the first plane to a selected word line and a selected bit line in a first conductive direction and a second unidirectional element couples a second cell from the second plane to the selected word line and selected bit line in a second conductive direction. The device further provides for a unidirectional conductive path to form from a memory cell in the first plane to a memory cell in the second plane sharing the same bit line. <IMAGE> |
