| 发明名称 |
METHOD FOR MESA-DIODES MANUFACTURING |
| 摘要 |
The invention relates to electronics, in particular to of technique of silicon diodes manufacturing. The method of silicon diodes manufacturing consists in deposition on epitaxial layer of a first type located on a high-alloy substrate of the same type 2 silica nitride, performing first silicon nitride photolithography in process of anodization. After layers of porous anode oxide 3 has been removed and formed of high-temperature silicon oxide protection layers 4, selective removal of silicon nitride above 5 zones is performed, wherein n-p junction by impurities diffusion of second type conductivity is formed, and formed a metal layer 6 chemically in voltaic manner. The technical result is improvement of periodicity of electric parameters. |
| 申请公布号 |
UA93186(C2) |
申请公布日期 |
2011.01.25 |
| 申请号 |
UA20070001957 |
申请日期 |
2007.02.26 |
| 申请人 |
KHERSON NATIONAL TECHNICAL UNIVERSITY |
发明人 |
SHUTOV STANISLAV VIKTOROVYCH;FROLOV OLEKSANDR OLEKSANDROVYCH;FROLOV KOSTIANTYN OLEKSANDROVYCH |
| 分类号 |
H01L21/04;H01L21/31;H01L21/316;H01L21/318;H01L21/329;H01L29/861 |
主分类号 |
H01L21/04 |
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