发明名称 Semiconductor devices
摘要 Methods, devices, modules, and systems providing semiconductor devices in a stacked wafer system are described herein. One embodiment includes a first wafer for NMOS transistors in a CMOS architecture and a second wafer for PMOS transistors in the CMOS architecture, with the first wafer being bonded and electrically coupled to the second wafer to form at least one CMOS device. Another embodiment includes a number of DRAM capacitors formed on a first wafer and support circuitry associated with the DRAM capacitors formed on a second wafer, with the first wafer being bonded and electrically coupled to the second wafer to form a number of DRAM cells. Another embodiment includes a first wafer having a number of vertical transistors coupled to a data line and a second wafer having amplifier circuitry associated with the number of vertical transistors, with the first wafer being bonded and electrically coupled to the second wafer.
申请公布号 US7875529(B2) 申请公布日期 2011.01.25
申请号 US20070867733 申请日期 2007.10.05
申请人 MICRON TECHNOLOGY, INC. 发明人 FORBES LEONARD;FARRAR PAUL A.;BHATTACHARYYA ARUP;HANAFI HUSSEIN I.;FARNWORTH WARREN M.
分类号 H01L21/30;H01L21/46 主分类号 H01L21/30
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