发明名称 |
PRODUCING METHOD FOR MULTI-LAYER DEPOSITION CAPACITOR |
摘要 |
PURPOSE: A method for manufacturing a multi-layer deposited condenser is provided to reduce the generation of voids in a ceramic material by implementing an epi-growing under a vacuum condition. CONSTITUTION: A wafer is cleaned(S1). The number of deposition is defined in order to the number of layers with respect to an inner electrode pattern and a dielectric layer(S2). The electrode pattern is printed on the cleaned wafer(S3). The dielectric layer is deposited on the electrode pattern through an atomic layer deposition method(S4). An annealing process is implemented in order to thermally treat the dielectric layer(S5). The deposition process and the annealing process are repeatedly implemented(S6). An outer electrode is deposited(S7). A cutting process is implemented(S8).
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申请公布号 |
KR20110007294(A) |
申请公布日期 |
2011.01.24 |
申请号 |
KR20090064744 |
申请日期 |
2009.07.16 |
申请人 |
KIM, HYUNG TAE |
发明人 |
KIM, HYUNG TAE;CHOI, MAN HO;KOO, CHI SUNG |
分类号 |
H01G4/30 |
主分类号 |
H01G4/30 |
代理机构 |
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地址 |
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