| 摘要 |
PURPOSE: A method is provided to improve optical efficiency and to reduce power consumption. CONSTITUTION: A first buffer layer(21) is grown on a substrate(10) at first temperature. A second buffer layer(22) is grown on the first buffer layer at second temperature less than the first temperature. The growth temperature range of the first buffer layer is 550 or 600°C. The first buffer layer and the second buffer layer are made of a group III nitride semiconductor.
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