METHOD OF FORMING A MAGNETIC TUNNEL JUNCTION USING A SINGLE MASK

摘要

A method for integrating a magnetic tunnel junction (MTJ) device into an integrated circuit includes providing in a semiconductor back-end-of-line (BEOL) process flow a substrate having a first interlevel dielectric layer and at least a first metal interconnect. Over the first interlevel dielectric layer and the first metal interconnect, magnetic tunnel junction material layers are deposited. From the material layers a magnetic tunnel junction stack, coupled to the first metal interconnect, is defined using a single mask process. The magnetic tunnel junction stack is integrated into the integrated circuit.