III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: An III nitride semiconductor light emitting device is provided to uniformly improve total current density of a lighting emitting device by uniformizing the current density between different branch electrodes. CONSTITUTION: A first electrode(110) and a second electrode(120) supply a current in order to recombine an electronic and a hole. A first branch electrode is emanated from the first electrode. The thickness of the second branch electrode has the same thickness in a longitudinal direction. The first electrode and the second electrode are prepared to be a single electrode, respectively.