| 摘要 |
<p>The process of treating a metal layer (50) deposited on a substrate (30, 60) by an ion beam (100), comprises introducing the metal layer in the substrate, where the metal layer has a thickness of 0.2-1000 nm, by selecting the dose of ions per unit area of 10 1>4>ions/cm 2>and 10 1>8>ions/cm 2>. The accelerating voltage of ions is 20-200 kV. The temperature of the metal layer is less than or equal to Tf, which is the melting temperature of the metal of the metal layer. The process further comprises spraying and pre-introducing the metal layer on the substrate by ion bombardment. The process of treating a metal layer (50) deposited on a substrate (30, 60) by an ion beam (100), comprises introducing the metal layer in the substrate, where the metal layer has a thickness of 0.2-1000 nm, by selecting the dose of ions per unit area of 10 1>4>ions/cm 2>and 10 1>8>ions/cm 2>. The accelerating voltage of ions is 20-200 kV. The temperature of the metal layer is less than or equal to Tf, which is the melting temperature of the metal of the metal layer. The process further comprises spraying and pre-introducing the metal layer on the substrate by ion bombardment before introducing the metal layer in the substrate so as to reduce the initial thickness of the metal layer and until the metal layer reaches the desired thickness. The substrate and the metal layer are movable with respect to the ion beams at a speed of 0.1-1000 mm/s. Single area of the metal layer is moved under the ion beams according to the speed of movement of ion beams. The substrate is made of ceramics, glass, semiconductors, metals and polymers. An independent claim is included for a substrate with a metal layer.</p> |
