GALLIUM NITRIDE-BASED SEMICONDUCTOR LASER DIODE

摘要

PURPOSE: A gallium nitride-based semiconductor laser diode is provided to generate optical laser having wavelength over 50nm by using a semi-polar plane. CONSTITUTION: An active layer(29) is installed to generate optical laser having wavelength over 50nm. Light held in a core semiconductor region(19) has long wavelength. A first optical guide layer(27) and a second optical guide layer(27) have a double structure. A clad layer(21) is formed by at least one of AlGaN and InAlGaN. The thickness of a first epitaxial semiconductor region(15) is thicker than the that of the core semiconductor region.