发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PURPOSE: A nonvolatile semiconductor memory device is provided to reduce a current which flows into a non-selected memory string and to accurately read data. CONSTITUTION: A plurality of first memory transistors are serially connected to a plurality of first memory strings. One end part is connected to one end of the first memory string. A first wire is mutually connected to the other end part of a plurality of first selecting transistors. One end of the first wire is connected to a switching circuit.</p>
申请公布号 KR20110007024(A) 申请公布日期 2011.01.21
申请号 KR20100020686 申请日期 2010.03.09
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HISHIDA TOMOO;IWATA YOSHIHISA;ISHIDUKI MEGUMI;KATSUMATA RYOTA;FUKUZUMI YOSHIAKI;KITO MASARU;KIDOH MASARU;TANAKA HIROYASU;KOMORI YOSUKE;MATSUNAMI JUNYA;FUJIWARA TOMOKO;AOCHI HIDEAKI;KIRISAWA RYOUHEI;MIKAJIRI YOSHIMASA;OOTA SHIGETO
分类号 H01L27/115;G11C16/00;H01L21/8247 主分类号 H01L27/115
代理机构 代理人
主权项
地址