发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
<p>PURPOSE: A nonvolatile semiconductor memory device is provided to reduce a current which flows into a non-selected memory string and to accurately read data. CONSTITUTION: A plurality of first memory transistors are serially connected to a plurality of first memory strings. One end part is connected to one end of the first memory string. A first wire is mutually connected to the other end part of a plurality of first selecting transistors. One end of the first wire is connected to a switching circuit.</p> |
申请公布号 |
KR20110007024(A) |
申请公布日期 |
2011.01.21 |
申请号 |
KR20100020686 |
申请日期 |
2010.03.09 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HISHIDA TOMOO;IWATA YOSHIHISA;ISHIDUKI MEGUMI;KATSUMATA RYOTA;FUKUZUMI YOSHIAKI;KITO MASARU;KIDOH MASARU;TANAKA HIROYASU;KOMORI YOSUKE;MATSUNAMI JUNYA;FUJIWARA TOMOKO;AOCHI HIDEAKI;KIRISAWA RYOUHEI;MIKAJIRI YOSHIMASA;OOTA SHIGETO |
分类号 |
H01L27/115;G11C16/00;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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