| 摘要 |
PURPOSE: A nitride semiconductor light emitting device is provided to control the generation of a Schottky barrier in the interface between a contact layer and an electrode. CONSTITUTION: An LED(1) comprises a GaN substrate(3), a gallium nitride-based semiconductor region(5), an insulating layer(19), a p-electrode(21), and an n-electrode(23). The GaN substrate is arranged between the n-electrode and the gallium nitride-based semiconductor region. The GaN substrate has a major side(S1). The major side is a surface which is opposite to the n-electrode.
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