| 摘要 |
In a semiconductor laser device a dual wavelength semiconductor laser chip is joined onto a submount, junction down, to reduce built-in stress produced between the laser chip and the submount and to decrease polarization angles of the two respective lasers. SnAg solder is used to join the dual wavelength semiconductor laser chip onto the submount. When joining, with respect to each of the two lasers, a ratio of a distance between the center line of a waveguide and an end, placed at a lateral side of the laser chip, of a portion joining the laser chip and the submount, to a distance between the center line of the waveguide and another end, placed toward the center of the laser chip, of the portion joining the laser chip and the submount, falls within a range of 0.69 to 1.46.
|
