PLATING STRUCTURE AND METHOD FOR MANUFACTURING ELECTRIC MATERIAL

摘要

There is provided a plating structure obtained by heat-treating a silver-plated structure obtained by forming a tin-plated layer, an indium-plated layer, or a zinc-plated layer, having a thickness of 0.001 to 0.1μm, on a surface of the silver-plated layer formed on a surface of a plating base. There is also provided a coating method for obtaining the plating structure which comprises the step of melting a particle deposit spottedly deposited at 2×10−6 to 8×10−6 g/cm2 such that the spot-deposited particles have gaps therebetween as viewed above and the particles each having an average diameter of 20 to 80 nm do not pile up in a direction perpendicular to the surface of the silver layer to obtain a film.