Method for fabricating semiconductor device, involves forming oxide layer, where silicon layer is formed on portion of oxide layer, and thermal oxidation is performed for transforming silicon layer in another oxide layer

摘要

The method involves forming an oxide layer (20), where a silicon layer (22) is formed on a portion of the oxide layer. The silicon layer has a defined thickness. Thermal oxidation is performed for transforming the silicon layer over an entire defined thickness in another oxide layer. The latter oxide layer has an oxide thickness which is dependent on the defined thickness of the silicon layer. The silicon layer is made of polycrystalline silicon, where an active gate region is made of monocrystalline silicon.