发明名称 A METHOD OF INHIBITING FORMATION OF DEPOSITS IN A MANUFACTURING SYSTEM
摘要 <p>A method inhibits formation of deposits on a cooling surface of an electrode. The electrode is used in a manufacturing system that deposits a material on a carrier body. The cooling surface comprises copper. The system includes a reactor defining a chamber. The electrode is at least partially disposed within the chamber and supports the carrier body. A circulation system, in fluid communication with the electrode, transports a coolant composition to and from the cooling surface. The coolant composition comprises a coolant and dissolved copper from the cooling surface. A filtration system is in fluid communication with the circulation system. The method heats the electrode. The cooling surface of the electrode is contacted with the coolant composition. The material is deposited on the carrier body, and the coolant composition is filtered with the filtration system to remove at least a portion of the dissolved copper therefrom.</p>
申请公布号 WO2011008849(A1) 申请公布日期 2011.01.20
申请号 WO2010US41961 申请日期 2010.07.14
申请人 HEMLOCK SEMICONDUCTOR CORPORATION;DEHTIAR, MAX;GIARDINA, JASON;VANDERHOVEL, JAIME;HOFMEISTER, MICHAEL;MOLNAR, MICHAEL, JOHN;STRATTON, ROBERT, E.;PAWELKOWSKI, STEPHEN 发明人 DEHTIAR, MAX;GIARDINA, JASON;VANDERHOVEL, JAIME;HOFMEISTER, MICHAEL;MOLNAR, MICHAEL, JOHN;STRATTON, ROBERT, E.;PAWELKOWSKI, STEPHEN
分类号 C23C16/44;C23C16/24;C23C16/458;C23C16/52;F25B43/00;F25B47/00 主分类号 C23C16/44
代理机构 代理人
主权项
地址