| 摘要 |
PROBLEM TO BE SOLVED: To provide a monolithic multi-wavelength semiconductor laser element, facilitating the manufacture of a high-precision multi-wavelength semiconductor laser light source, without requiring high-precision mechanical mounting for aligning the optical axes of individual LDs which emit laser beams of different wavelengths.SOLUTION: A first composition-modulated buffer layer 20 and a second composition-modulated buffer layer 30 comprising a GaAsN mixed crystal are respectively formed on the surface 10a and the back surface b of a substrate 10 comprising the GaAsN mixed crystal. A blue-violet LD section 40 is formed on the first composition-modulated buffer layer 20, and an infrared LD part 50 and a red LD part 60 are each formed on the second composition-modulated buffer layer 30. The first composition-modulated buffer layer 20 is formed of a gradient composition, such that the content of N atoms increases, as going toward a first semiconductor layer 40 from the substrate 10. The second composition-modulated buffer layer 30 is formed of a gradient composition, such that the content of N atoms decreases, as going toward a second semiconductor layer 50 and a third semiconductor layer 60 from the substrate 10. |
