SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a method for manufacturing a semiconductor device, which is provided with: a step of forming, on a first active region (10a) formed on a substrate (10), a first gate insulating film (17a) containing a high dielectric material, and a first gate electrode (18a) containing a metal material, and forming, on a second active region (10b) formed on the substrate (10), a second gate insulating film (17b) containing a high dielectric material, and a second gate electrode (18b) containing a metal material; a step of introducing negative fixed charges into the end portion of the first gate insulating film (17a) and the end portion of the second gate insulating film (17b); and a step of removing the end portion of the first gate insulating film (17a).