MULTIBEAM COHERENT LASER DIODE SOURCE (EMBODIMENTS)

摘要

A multibeam coherent laser diode source comprises a master laser, a linear amplifier and two perpendicular amplifiers. The master laser and amplifiers are in the form of a single heterostructure containing an active layer, two limiting layers and a radiation influx area with an influx layer. The heterostructure is characterized by the ratio of the refractive index (n??) of the heterostructure to the refractive index (n??) of the influx layer. The ratio n?? : n?? is determined from a range extending from one plus delta to one minus gamma, where delta and gamma are defined by a number much less than one and gamma is greater than delta. The linear amplifier is positioned so that the optical axis of radiation propagation from the master laser coincides with the axis of the linear amplifier. Each perpendicular amplifier has an output edge and is positioned so that its optical axis is situated at a right angle to the axis of the linear amplifier. An element is provided near the point where the amplifier axes cross in order for a portion of the radiation to flow over from the linear amplifier to a perpendicular amplifier. This element includes a reflecting plane which intersects the active layer and part of the influx area of the heterostructure within a range of 20% to 80% of the thickness of the influx layer and which forms a 45° angle of incline together with the amplifier axes. According to another embodiment of the diode source, an output element is situated along the active area of a perpendicular amplifier, said output element including a reflecting plane that intersects at an angle of 45° the planes of the heterostructure layers, including the active layer and from 30% to 80% of the thickness of the influx layer. The technical result is an increased intensity of laser radiation, greater efficiency and reliability, a longer operating life, an improved modulation rate and a simplified manufacturing technique.