发明名称 |
ENGINEERED INTERCONNECT DIELECTRIC CAPS HAVING COMPRESSIVE STRESS AND INTERCONNECT STRUCTURES CONTAINING SAME |
摘要 |
<p>PURPOSE: An interconnect dielectric material cap formed to have compressive stress, and interconnect structures having the same are provided to reduce the crack of layers and devices and improve the reliability of the device. CONSTITUTION: The structure comprises a dielectric material(14), a barrier layer(16), and at least one conductive component(18). The typical compressive stress of a dielectric capping layer(20) is between 200MPa and 2000MPa. The compressive stress of the deposited dielectric capping layer is continuously maintained even after the baking step operated after the evaporation.</p> |
申请公布号 |
KR20110006617(A) |
申请公布日期 |
2011.01.20 |
申请号 |
KR20100066676 |
申请日期 |
2010.07.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
NGUYEN SON VAN;HAIGH JR. THOMAS JASPER;SHOBHA HOSADURGA;GRILL ALFRED;COHEN STEPHAN ALAN;SHAW THOMAS MC CARROLL;LIU XIAN HU |
分类号 |
H01L21/31;H01L21/28;H01L23/48;H01L23/52 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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