| 摘要 |
PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device including an alloy gate electrode layer capable of providing bonding nature between a blocking layer and gate electrode layer, while preventing the back-tunneling phenomena of electrons from a gate electrode layer to electric charges storing layer. SOLUTION: This semiconductor memory device comprises a semiconductor substrate 21 including a first impurity region 22a and a second impurity region 22b, and gate structure 24 formed on the semiconductor substrate 21 that contacts the first impurity region 22a and second impurity region 22b. The gate structure 24 has a laminated structure consisting of a tunneling layer 25, electrical potential storing layer 26a, blocking layer 27 and gate electrode layer 28 laminated one by one. The gate electrode layer 28 is formed from alloy of a first metal of precious metals, such as Pt and Ir, with a work function of no less than 5.1 eV and second metal including at least one material from Ga, In, Sn, Tl, Pb, Bi, Al and Ti that excels in bonding nature with an oxidized layer. COPYRIGHT: (C)2007,JPO&INPIT
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