| 摘要 |
PROBLEM TO BE SOLVED: To prevent increase of off-current by formation of a defect in junction between a channel formation region and an impurity region in a p-channel type TFT when making structures of TFTs arranged in a display region and a drive circuit of a semiconductor device appropriate in accordance with a function.SOLUTION: In this semiconductor device where a first n-channel type TFT is arranged in a display region and a second n-channel type TFT and a p-channel type TFT are arranged in a drive circuit, the p-channel type TFT includes a channel formation region and an impurity region adjacent to it, wherein an impurity element added for the n-channel type TFT is not included in the impurity region. Thus, the channel length of the p-type channel type TFT is set smaller than that of the n-channel type TFT. |
