发明名称 CMOS Image Sensor With Wide (Intra-Scene) Dynamic Range
摘要 A CMOS image sensor uses a special exposure control circuit to independently adjust the photodiode exposure (integration) time for each pixel in a pixel array to obtain non-saturated photodiode charges for each pixel. Exposure time adjustment involves extrapolating a pixel's final photodiode charge using an intermediate photodiode charge measured after a predetermined portion of an exposure frame period. If the intermediate photodiode charge is, e.g., over 50% of the photodiode's full-well capacity after half of the exposure frame period, then saturation is likely and the photodiode is reset to integrate only during the remaining time. If not, then the photodiode integrates over the allotted exposure frame period. Data indicating the length of the exposure portion is stored as analog data on the memory node of each pixel, and readout of the final photodiode charge is performed using Correlated Double Sampling (CDS) techniques.
申请公布号 US2011013064(A1) 申请公布日期 2011.01.20
申请号 US20100837074 申请日期 2010.07.15
申请人 TOWER SEMICONDUCTOR LTD. 发明人 LAHAV ASSAF;FENIGSTEIN AMOS
分类号 H04N5/335 主分类号 H04N5/335
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