| 摘要 |
A semiconductor memory device including: word lines extending in a Y direction on a semiconductor substrate, the word lines being arranged in an X direction perpendicular to the Y direction and being parallel to one another; active regions each elongating and intersecting with two of the word lines, the active regions being arranged in the Y direction and being parallel to one another on the semiconductor substrate; a capacitance contact plug connected to each end of each of the active regions in the longitudinal direction thereof; a stack lower electrode including a first lower electrode formed on the capacitance contact plug and a second lower electrode formed on the first lower electrode; a capacitance insulating film; and an upper electrode, wherein the center position of the second lower electrode is shifted in a predetermined direction from the center position of the first lower electrode.
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