| 摘要 |
A semiconductor device and a fabricating method thereof are provided to improve yield by reducing a short fail caused by a metal pattern in a sawing process. A pattern is formed in a scribe region of a semiconductor substrate in a predetermined shape. A first metal pattern(110) is formed on an edge of the pattern, and a via pattern(130) is formed in an inside of the first metal pattern. A second metal pattern(120) is formed on the first metal pattern and in an inside of the pattern. The second metal pattern is a top metal pattern, and the pattern formed in the inside of the pattern is formed in a mesh shape.
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