| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device capable of generating a reference current having both characteristic fluctuation matching a memory cell and precision of a constant current source.SOLUTION: A readout circuit 100 includes: a memory cell array 110 that includes a readout target memory cell that is a data readout target; a reference memory cell having the same configuration as this memory cell; a constant current source 131 and second constant current source 132 which have the same characteristics; and a reference current source 130 that generates, as a reference current for determining the logic level of the readout target memory cell, a current obtained by subtracting one constant current flowing through the constant current source 131 out of a first constant current or a second constant current flowing through the constant current source 132 from a current obtained by adding the other constant current out of the first constant current or the second constant current to a reference memory cell current flowing in the reference memory cell. |
