| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and device for forming an amorphous carbon film excelling in coverage performance and surface roughness.SOLUTION: A control part 100 controls a heating heater 16 to heat the inside of a reaction tube 2 with a plurality of semiconductor wafers W housed therein to 800-950°C. Next, the control part 100 controls an MFC control part to supply nitrogen gas into the heated reaction tube 2 from a purge gas supply tube 18, whereby the inside of the reaction tube 2 is purged to remove water from the semiconductor wafer W. The control part 100 controls the heating heater 16 to heat the inside of the reaction tube 2 to a predetermined temperature, and controls the MFC control part to supply ethylene into the heated reaction tube 2 from a processing gas introduction tube 17, whereby an amorphous carbon film is formed on the semiconductor wafer W. |
