EPITAXIAL SILICON WAFER AND METHOD FOR MANUFACTURING SAME

摘要

Provided is an epitaxial silicon wafer having an excellent gettering capability, in which a polysilicon layer is formed on the rear surface of a silicon crystal substrate into which phosphorus (P) and germanium (Ge) are doped. The rear surface side of the silicon crystal substrate into which phosphorus and germanium are doped at high concentrations is subjected to a PBS (polysilicon back seal) generation process for growing the polysilicon layer, and then a baking process is performed. After that, a surface layer of the silicon crystal substrate is polished by a predetermined amount, and then a silicon epitaxial layer is grown by a CVD method. As a result, the number of LPDs (light point defects) (generated by an SF (stacking fault)) generated on the surface of an epitaxial silicon wafer due to the SF is significantly reduced.