PHASE CHANGE MEMORY CELL WITH SELF-ALIGNED VERTICAL HEATER AND LOW-RESISTIVITY INTERFACE

摘要

PROBLEM TO BE SOLVED: To provide a process to produce a phase change memory cell having a completely self-aligned vertical heater.SOLUTION: A low-resistivity interface material is provided between contact regions of a self-aligned vertical heater element and a selection device. A phase change chalcogenide material is directly deposited on the vertical heater element. In some embodiment, the vertical heater element is L-shape having a curved vertical wall and a horizontal base along a wordline direction. In some embodiment, the low-resistivity interface material is being deposited into a trench having a negative profile using a PVD technique. The upper face of the low-resistivity interface material may have a tapered bird-beak extension.