摘要 |
PROBLEM TO BE SOLVED: To provide a horizontal-type IGBT having large current density formed on an SOI substrate.SOLUTION: In horizontal-type IGBT structure that has an emitter region formed of two or more second conductivity type base layers at the side of an oxide film groove and covers a second conductivity type base layer of the emitter region with a first conductivity type layer having a concentration higher than that of a drift layer, the length of a gate electrode at the side of the oxide film groove is reduced as compared with that at the side of a collector, and the high concentration first conductivity type layer is formed between the second conductivity type base layers and under the second conductivity type base layer at the side of the collector, thus achieving a high concentration of the first conductivity type layer while maintaining a breakdown voltage and improving current density. |