发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device wherein a semiconductor element made of Si or Si group material mounted on a substrate, the semiconductor element is mounted on the substrate and the semiconductor element is bonded to a silver bonding material via a oxide film formed on the semiconductor element. The bonding material comprising silver oxide particles having an average particle size of 1 nm to 50 nm and an organic reducing agent is used for bonding in air, which gives a high bonding strength to the oxide on the semiconductor element.
申请公布号 US2011012262(A1) 申请公布日期 2011.01.20
申请号 US20100825783 申请日期 2010.06.29
申请人 MORITA TOSHIAKI;YASUDA YUSUKE;IDE EIICHI 发明人 MORITA TOSHIAKI;YASUDA YUSUKE;IDE EIICHI
分类号 H01L23/498;H01L21/768 主分类号 H01L23/498
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