| 摘要 |
Trig modulation electrostatic discharge (ESD) protection devices are presented. An ESD protection device includes a semiconductor substrate. A high voltage N-well (HVNW) region is formed in the semiconductor substrate. An NDD region, a first P-body region and a second P-body region are formed in the HVNW region, wherein the first P-body region is separated from the second P-body region with a predetermined distance, and wherein the NDD region is isolated from the first P-body region with an isolation region. An N+ doped source region is disposed in the NDD region. An N+ doped region is disposed in the first P-body region. A P+ doped region is disposed in the second P-body region. A first gate is disposed between the N+ doped region and the isolation region, and a second gate is disposed between the N+ doped region and the P+ doped region.
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