MICROWAVE PLASMA PROCESSING DEVICE AND MICROWAVE PLASMA PROCESSING METHOD

摘要

Disclosed is a microwave plasma processing device (100) which comprises: a chamber (1); a microwave generating source (39); waveguide structures (37a, 37b, 31, 28); a gas introduction section (15) that introduces gas for performing plasma processing; an exhaust port (23) to which is connected a gas exhaust device for exhausting the gas within the chamber (1); and a control section (50) that controls the processing conditions. The control section (50) pre-stores the plasma processing distribution of plasma generated in accordance with a plurality of processing recipes whereby plasma of mutually different modes is formed, selects two or more processing recipes whereby the desired plasma processing distribution may be obtained by combining said processing recipes from the plurality of processing recipes, and performs plasma processing in accordance with the selected two or more processing recipes.