| 摘要 |
According to one embodiment, a semiconductor memory device includes a first memory, a second memory and a control circuit. The first memory includes a first bank number. The second memory includes a second bank number larger than the first bank number. The control circuit controls a precharge operation with respect to bit lines provided in the first and second memories. When performing, with respect to the first memory, a synchronous operation that is effected in synchronization with a clock, the control circuit changes over a second precharge operation to an operation time different from a first precharge operation during a period from the end of the initial first precharge operation to the start of the subsequent second precharge operation after receiving an address. |
