发明名称 SEMICONDUCTOR LASER DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of precisely adjusting output of laser light with a small amount of variation in Im value (photocurrent value of a light receiving element).SOLUTION: The semiconductor laser device includes: a semiconductor laser element having a first electrode provided on a reverse surface of a substrate, a semiconductor layer provided on a top surface of the substrate, and a second electrode provided on a top surface of the semiconductor layer; and a light receiving element which receives light output from the semiconductor laser element. In the semiconductor laser device, the first electrode is provided having an exposed region partially on the reverse surface of the substrate, the light receiving element is arranged having a light receiving surface opposed to the exposed region, and the exposed region is formed in a region not right below a waveguide.
申请公布号 JP2011014558(A) 申请公布日期 2011.01.20
申请号 JP20090154550 申请日期 2009.06.30
申请人 NICHIA CORP 发明人 OKAHISA EIICHIRO;FUJIMOTO HIDEYUKI
分类号 H01S5/022;H01S5/042;H01S5/22 主分类号 H01S5/022
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